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M474B1G73BH0-YH9 Samsung 8GB PC3-10600 DDR3 ECC

M474B1G73BH0-YH9

Overview M474B1G73BH0-YH9 Samsung 8GB PC3-10600 DDR3-1333MHz ECC Unbuffered CL9 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module

$265.00

Availability: In Stock

M474B1G73BH0‑YH9 Specifications

Samsung 8 GB DDR3‑1333 ECC Unbuffered SO‑DIMM (Laptop / Small‑Form Factor)

Manufacturer: Samsung
Manufacturer Model: M474B1G73BH0‑YH9
Product Line: Samsung DDR3 ECC SO‑DIMM
Product Series: 8 GB, 1333 MT/s, 1.35 V
Product Type: ECC Unbuffered SO‑DIMM
Product Name: Samsung 8 GB DDR3‑1333 ECC SO‑DIMM

KEY FEATURES:

Capacity: 8 GB

Memory Type: DDR3 SDRAM

ECC Support: Yes

Form Factor: 204‑pin SO‑DIMM

Voltage: 1.35 V (low voltage)

Speed: 1333 MT/s (PC3‑10600)

Rank / Organization: 2R × 8 (dual-rank ×8)

CAS Latency: CL9

PERFORMANCE:

Maximum Data Transfer Rate: ~10.6 GB/s (PC3‑10600)

Latency (CAS): 9 cycles

ENVIRONMENTAL & RELIABILITY:

Designed for use in laptop, embedded, or compact server environments

Error Correction: ECC to detect/correct single-bit errors

Low-power design helps reduce energy consumption

PHYSICAL:

Form Factor: 204‑pin SO-DIMM

Typical Module Height: ~30 mm

NOTES / COMPATIBILITY:

Check your motherboard / system supports ECC SO‑DIMMs

1.35 V design may also support 1.5 V in some systems (per Samsung product guide)

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