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M471B1G73EB0-YK0 Samsung 8GB PC3-12800 DDR3-1600MHz

M471B1G73EB0-YK0

Samsung 8GB PC3-12800 DDR3-1600MHz non-ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module

$59.00

Availability: In Stock

M471B1G73EB0‑YK0 Specifications

Samsung 8 GB DDR3L‑1600 SO‑DIMM

Manufacturer: Samsung
Manufacturer Model: M471B1G73EB0‑YK0
Product Line: Samsung DDR3L SO‑DIMM
Product Series: 8 GB, 1600 MT/s, 1.35 V
Product Type: Unbuffered, Non‑ECC SO‑DIMM
Product Name: Samsung 8 GB DDR3‑1600 (PC3‑12800) SO‑DIMM

KEY FEATURES:

Capacity: 8 GB

Memory Type: DDR3L SDRAM

ECC Support: No (Non‑ECC)

Form Factor: 204‑pin SO‑DIMM

Voltage: 1.35 V

Speed: 1600 MT/s (PC3‑12800)

Rank / Organization: 2R × 8 (Dual‑Rank)

CAS Latency: CL11

PERFORMANCE:

Maximum Data Transfer Rate: ~12.8 GB/s (PC3‑12800)

Latency (CAS): 11 cycles

ENVIRONMENTAL & RELIABILITY:

Designed for laptop and small‑form‑factor systems

Low‑voltage operation (1.35 V) for reduced power consumption

Non‑ECC (no error correction) — intended for general use

PHYSICAL:

Form Factor: 204‑pin SO‑DIMM

Typical Module Height: ~30 mm

NOTES / COMPATIBILITY:

Recognized by Intel platforms (tested on DDR3L 1600)

Uses Samsung “B-die” DRAM components (4 Gb × x8)

Compatible in laptops / systems that support DDR3L‑1600 SO‑DIMM

Low-voltage 1.35 V design may allow compatibility with 1.5 V systems depending on motherboard

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