Showing 541–552 of 554 results

M471B5273EB0-CK0 Samsung 4GB SODIMM 204-Pin Memory Module

$48.00
Samsung 4GB PC3-12800 DDR3-1600MHz non-ECC Unbuffered CL11 204-Pin SoDimm Dual Rank Memory Module

M471B5773CHS-CH9 Samsung is a unbuffered SO-DIMM non-ECC DDR3 1333MHz 204Pin with 2GB

$24.00
Samsung SO-DIMM with manufacturer reference ?is a unbuffered SO-DIMM non-ECC DDR3 1333MHz 204Pin with 2GB capacity (256Mx64). It is organized with 8 FBGA(78ball) 256Mx8 DRAM (Dynamic Random Access Memory).

M471B5773DH0-CK0 Samsung 2GB DDR3-1600MHz CL11 204-Pin SoDimm Single Rank Memory Module

$24.00
Samsung 2GB PC3-12800 DDR3-1600MHz non-ECC Unbuffered CL11 204-Pin SoDimm Single Rank Memory Module

M474A1G43DB0-CPB Samsung 8GB PC4-17000 DDR4-2133MHz Memory Module

$111.00
Samsung 8GB PC4-17000 DDR4-2133MHz ECC Unbuffered CL15 260-Pin SoDimm 1.2V Dual Rank Memory Module. The Samsung M474A1G43DB0-CPB is an 8GB DDR4-2133MHz ECC unbuffered memory module designed for high-performance computing systems. With a 260-pin SoDIMM form factor, it offers compatibility with a range of devices. Featuring a CL15 latency and operating at 1.2V, this dual-rank memory module provides reliable and efficient performance. Ideal for upgrading system memory in laptops, workstations, or small form factor PCs, it ensures smooth multitasking and enhanced overall system responsiveness.

M474A1G43EB1-CRC Samsung 8GB PC4-19200 DDR4-2400MHz Memory Module

$111.00
Samsung 8GB PC4-19200 DDR4-2400MHz ECC Unbuffered CL17 260-Pin SoDimm 1.2V Dual Rank Memory Module. The Samsung M474A1G43EB1-CRC is an 8GB DDR4-2400MHz ECC Unbuffered SoDimm memory module, designed for high-performance computing systems. With a CL17 latency and dual rank configuration, it ensures efficient data processing. This module operates at a low voltage of 1.2V, contributing to energy efficiency. Featuring a 260-pin form factor, it?s compatible with a wide range of systems requiring reliable memory solutions for seamless multitasking and intensive workloads.

M474A2K43BB1-CRC Samsung 16GB PC4-19200 DDR4-2400MHz

$136.00
M474A2K43BB1-CRC Samsung 16GB PC4-19200 DDR4-2400MHz ECC Unbuffered CL17 260-Pin SoDimm 1.2V Dual Rank Memory Module

M474A2K43BB1-CRCQ0 Samsung 16GB PC4-19200 DDR4-2400MHz

$0.00
M474A2K43BB1-CRCQ0 Samsung 16GB PC4-19200 DDR4-2400MHz ECC Unbuffered CL17 260-Pin SoDimm 1.2V Dual Rank Memory Module

M474A2K43DB1-CVF Samsung 16GB SODIMM 260-Pin Memory Module

$105.00
Samsung 16GB PC4-23400 DDR4-2933MHz ECC Unbuffered CL21 260-Pin SoDimm 1.2V Dual Rank Memory Module

M474A2K43DB1-CWE Samsung 16GB PC4-25600 DDR4-3200MHz Memory

$105.00
Samsung 16GB PC4-25600 DDR4-3200MHz ECC Unbuffered CL22 260-Pin SoDimm 1.2V Dual Rank Memory Module

M474A4G43AB1-CVF Samsung 32GB PC4-23400 DDR4-2933MHz Memory Module

$202.00
Samsung 32GB PC4-23400 DDR4-2933MHz ECC Unbuffered CL21 260-Pin SoDimm 1.2V Dual Rank Memory Module. The Samsung M474A4G43AB1-CVF is a 32GB DDR4-2933MHz ECC Unbuffered memory module designed for high-performance computing. Featuring a PC4-23400 specification, this dual-rank SoDimm operates at 1.2V and has a CAS latency of 21. With 260 pins, it ensures reliable and efficient data processing, making it ideal for use in servers and workstations that require enhanced error correction and unbuffered memory capabilities.

M474A4G43AB1-CWE Samsung 32GB PC4-25600 DDR4-3200MHz ECC SoDimm 1.2V Dual Rank Memory Module

$164.00
Samsung 32GB PC4-25600 DDR4-3200MHz ECC Unbuffered CL22 260-Pin SoDimm 1.2V Dual Rank Memory Module

M474A4G43MB1-CTD Samsung 32GB 2666MHz Pc4-21300 DDR4 SDRAM

$158.00
Samsung 32GB 2666MHz Pc4-21300 DDR4 SDRAM. This memory capacity of this device is 32GB, meaning it can store a large amount of data, allowing for smooth and efficient operation of multiple applications. The DDR4 SDRAM technology used in this memory module provides improved performance compared to previous DDR generations. The speed of this memory module is 2666MHz, which is part of the PC4-21300 standard. The speed is measured in Megahertz (MHz) and refers to the number of clock cycles the memory can perform in one second. A higher speed means the memory can access data faster, leading to improved overall system performance.